AP4513GM-HF MOSFET Datasheet: NP-Ch, 35V, 5.8(4.3)A. Full specification with pinout and replacement list

AP4513GM-HF Specs and Replacement

Type Designator: AP4513GM-HF

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.8(4.3) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 90(95) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036(0.068) Ohm

Package: SO8

AP4513GM-HF substitution

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AP4513GM-HF datasheet

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AP4513GM-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35V D2 D2 Low On-resistance RDS(ON) 36m D1 D1 Fast Switching Performance ID 5.8A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -35V G1 S1 SO-8 RDS(ON) 68m Description ID -4.3A The Advanced Power MOSFETs from A... See More ⇒

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AP4513GH-A RoHS-compliant Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35V D1/D2 Good Thermal Performance RDS(ON) 32m Fast Switching Performance ID 7.7A S1 G1 P-CH BVDSS -35V S2 G2 RDS(ON) 68m TO-252-4L Description ID -5.5A The Advanced Power MOSFETs from APEC provide the designer with ... See More ⇒

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AP4513GH RoHS-compliant Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35V D1/D2 Good Thermal Performance RDS(ON) 42m Fast Switching Performance ID 10A S1 G1 P-CH BVDSS -35V S2 G2 RDS(ON) 75m TO-252-4L Description ID -8A Advanced Power MOSFETs from APEC provide the designer with the best... See More ⇒