FRE9260H Specs and Replacement

Type Designator: FRE9260H

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 700 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: TO258AA

FRE9260H substitution

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FRE9260H datasheet

 7.1. Size:47K  intersil
 fre9260.pdf pdf_icon

FRE9260H

FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 19A, -200V, RDS(on) = 0.210 TO-258AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(SI) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD... See More ⇒

Detailed specifications: FRE264R, FRE460D, FRE460H, FRE460R, FRE9160D, FRE9160H, FRE9160R, FRE9260D, STP75NF75, FRE9260R, FRF150D, FRF150H, FRF150R, FRF250D, FRF250H, FRF250R, FRF254D

Keywords - FRE9260H MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.