2SK56
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK56
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 10
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 0.01
A
Tjⓘ - Maximum Junction Temperature: 125
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1000
Ohm
Package:
TO92
2SK56
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK56
Datasheet (PDF)
0.1. Size:256K toshiba
2sk568.pdf 
"MG8G4EM1""MG8G4EM1""MG8G4EM1""MG8G4EM1""MG8G4EM1""MG8G4EM1"
0.3. Size:236K inchange semiconductor
2sk560.pdf
isc N-Channel MOSFET Transistor 2SK560DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
0.4. Size:236K inchange semiconductor
2sk565.pdf
isc N-Channel MOSFET Transistor 2SK565FEATURESDrain Current I =9.6A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATING
0.5. Size:236K inchange semiconductor
2sk562.pdf
isc N-Channel MOSFET Transistor 2SK562FEATURESDrain Current I =39A@ T =25D CDrain Source Voltage-: V = 50V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh speed power Switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou
0.6. Size:236K inchange semiconductor
2sk564.pdf
isc N-Channel MOSFET Transistor 2SK564FEATURESDrain Current I =32A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS
0.7. Size:236K inchange semiconductor
2sk566.pdf
isc N-Channel MOSFET Transistor 2SK566FEATURESDrain Current I =2.9A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned especially for high voltage,high speed applications,such as off-line switching power supplies ,
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