2SK559
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK559
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 115
nS
Cossⓘ -
Output Capacitance: 1100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25
Ohm
Package:
TO3P
2SK559
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK559
Datasheet (PDF)
..2. Size:239K inchange semiconductor
2sk559.pdf 
isc N-Channel MOSFET Transistor 2SK559DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
9.5. Size:231K inchange semiconductor
2sk556.pdf
isc N-Channel MOSFET Transistor 2SK556DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
9.6. Size:236K inchange semiconductor
2sk557.pdf
isc N-Channel MOSFET Transistor 2SK557DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
Datasheet: AP4543GEH-HF
, AP4543GEM-HF
, AP4543GMT-HF
, AP4563AGH-HF
, AP4563GH-HF
, AP4563GM
, AP4569GD
, 2SK56
, RFP50N06
, 2SK560
, 2SK578
, 2SK579L
, 2SK580L
, 2SK579S
, 2SK580S
, 2SK583
, 2SK620
.
