All MOSFET. 2SK559 Datasheet

 

2SK559 Datasheet and Replacement


   Type Designator: 2SK559
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO3P
 

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2SK559 Datasheet (PDF)

 ..1. Size:184K  no
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2SK559

 ..2. Size:239K  inchange semiconductor
 2sk559.pdf pdf_icon

2SK559

isc N-Channel MOSFET Transistor 2SK559DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies

 9.1. Size:247K  hitachi
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2SK559

 9.2. Size:521K  hitachi
 2sk55.pdf pdf_icon

2SK559

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Datasheet: AP4543GEH-HF , AP4543GEM-HF , AP4543GMT-HF , AP4563AGH-HF , AP4563GH-HF , AP4563GM , AP4569GD , 2SK56 , RFP50N06 , 2SK560 , 2SK578 , 2SK579L , 2SK580L , 2SK579S , 2SK580S , 2SK583 , 2SK620 .

History: HGB080N08SL | UF830KL-TA3-T | UF640L-T2Q-R | 2N4222A | HM80N03I | IXTH68P20T | HGB080N10A

Keywords - 2SK559 MOSFET datasheet

 2SK559 cross reference
 2SK559 equivalent finder
 2SK559 lookup
 2SK559 substitution
 2SK559 replacement

 

 
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