2SK559 Specs and Replacement
Type Designator: 2SK559
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 1100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO3P
2SK559 substitution
- MOSFET ⓘ Cross-Reference Search
2SK559 datasheet
2sk559.pdf
isc N-Channel MOSFET Transistor 2SK559 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies... See More ⇒
Detailed specifications: AP4543GEH-HF, AP4543GEM-HF, AP4543GMT-HF, AP4563AGH-HF, AP4563GH-HF, AP4563GM, AP4569GD, 2SK56, AON7410, 2SK560, 2SK578, 2SK579L, 2SK580L, 2SK579S, 2SK580S, 2SK583, 2SK620
Keywords - 2SK559 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: DMN4031SSDQ
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