2SK579L
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK579L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 1.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 95
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5
Ohm
Package:
DPAK
2SK579L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK579L
Datasheet (PDF)
..1. Size:354K inchange semiconductor
2sk579l.pdf 
isc N-Channel MOSFET Transistor 2SK579LFEATURESDrain Current : I = 1.5A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.2. Size:286K inchange semiconductor
2sk579s.pdf
isc N-Channel MOSFET Transistor 2SK579SFEATURESDrain Current : I = 1.5A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
9.2. Size:284K inchange semiconductor
2sk578.pdf
isc N-Channel MOSFET Transistor 2SK578FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 0.22(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
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