2SK579L Datasheet and Replacement
Type Designator: 2SK579L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: DPAK
2SK579L substitution
2SK579L Datasheet (PDF)
2sk579l.pdf

isc N-Channel MOSFET Transistor 2SK579LFEATURESDrain Current : I = 1.5A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk579s.pdf

isc N-Channel MOSFET Transistor 2SK579SFEATURESDrain Current : I = 1.5A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
Datasheet: AP4563AGH-HF , AP4563GH-HF , AP4563GM , AP4569GD , 2SK56 , 2SK559 , 2SK560 , 2SK578 , IRF530 , 2SK580L , 2SK579S , 2SK580S , 2SK583 , 2SK620 , 2SK655 , 2SK656 , 2SK657 .
History: CES2317 | SSM3J358R | IRF7205PBF-1 | IRF7452PBF | STQ1NC45 | CES2321A
Keywords - 2SK579L MOSFET datasheet
2SK579L cross reference
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History: CES2317 | SSM3J358R | IRF7205PBF-1 | IRF7452PBF | STQ1NC45 | CES2321A



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