All MOSFET. AP4880BGM-HF Datasheet

 

AP4880BGM-HF Datasheet and Replacement


   Type Designator: AP4880BGM-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SO8
 

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AP4880BGM-HF Datasheet (PDF)

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 ap4880bgm-hf.pdf pdf_icon

AP4880BGM-HF

AP4880BGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 9mD Fast Switching Characteristic ID 13AGS RoHS CompliantSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,r

 8.1. Size:126K  ape
 ap4880gem.pdf pdf_icon

AP4880BGM-HF

AP4880GEMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VDD Fast Switching Characteristic RDS(ON) 8.5mDD Low On-resistance ID 14AG RoHS CompliantSSSSO-8DescriptionDThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast swit

 8.2. Size:81K  ape
 ap4880gm.pdf pdf_icon

AP4880BGM-HF

AP4880GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance BVDSS 25V DDFast Switching D RDS(ON) 8.5m DSimple Drive Requirement ID 13A GSSSO-8SDescriptionDDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination o

Datasheet: 2SK2645-01MR , 2SK2654-01 , 2SK2761-01MR , 2SK2765-01 , 2SK3496-01MR , 2SK3683-01MR , 2SK4075 , 2SK659 , IRLB3034 , AP4880GM , AP4920GM-HF , AP4924GM , AP4933GM-HF , AP4936GM , AP4951GM , AP4951GM-HF , AP4953GM-HF .

History: EFC4615R

Keywords - AP4880BGM-HF MOSFET datasheet

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