AP4920GM-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP4920GM-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SO8
AP4920GM-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4920GM-HF Datasheet (PDF)
ap4920gm-hf.pdf
AP4920GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD2D2D1 Low On-resistance RDS(ON) 25mD1 Fast Switching ID 7AG2S2 RoHS Compliant & Halogen-FreeG1SO-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast s
ap4924gm.pdf
AP4924GMRoHS-compliant ProductAdvanced Power Dual N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS 20VD2D2 Low On-resistance RDS(ON) 35mD1D1 Fast Switching ID 6AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G2ruggedized devic
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