AP4933GM-HF Datasheet and Replacement
Type Designator: AP4933GM-HF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 3.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.5 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SO8
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AP4933GM-HF Datasheet (PDF)
ap4933gm-hf.pdf

AP4933GM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2 Low Gate Charge RDS(ON) 90mD1D1 Fast Switching Characteristic ID -3.8AG2 RoHS Compliant & Halogen-FreeS2G1S1SO-8DescriptionAP4933 series are from Advanced Power innovated design andD2D1silicon
ap4936gm.pdf

AP4936GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow Gate Charge BVDSS 25V D2D2D1Simple Drive Requirement RDS(ON) 37m D1Fast Switching ID 5.8A G2S2 RoHS CompliantG1SO-8S1DescriptionD2D1The Advanced Power MOSFETs from APEC provi
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History: 5N90 | AP4N1R1CDT-A | 5N60A
Keywords - AP4933GM-HF MOSFET datasheet
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History: 5N90 | AP4N1R1CDT-A | 5N60A



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