AP4961GM Datasheet and Replacement
Type Designator: AP4961GM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 235 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SO9
AP4961GM substitution
AP4961GM Datasheet (PDF)
ap4961gm.pdf

AP4961GMRoHS-compliant ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Lower On-resistance BVDSS -20VD2D1 Simple Drive Requirement RDS(ON) 28mD1 Dual P MOSFET Package ID -7AG2S2G1SO-8S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,ruggedize
ap4963gem.pdf

AP4963GEM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2 Lower Gate Charge D1 RDS(ON) 36mD1 Fast Switching Performance ID -6AG2 RoHS Compliant & Halogen-FreeS2G1SO-8S1DescriptionAP4963 series are from Advanced Power innovated design D1 D2and silicon proce
ap4963gem-hf.pdf

AP4963GEM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2 Lower Gate Charge D1 RDS(ON) 36mD1 Fast Switching Performance ID -6AG2 RoHS Compliant & Halogen-FreeS2G1SO-8S1DescriptionD1 D2Advanced Power MOSFETs from APEC provide theG1 G2designer with the b
Datasheet: AP4936GM , AP4951GM , AP4951GM-HF , AP4953GM-HF , AP4955GM , AP4957AGM , AP4957GM , AP4959GM , BS170 , AP4963GEM-HF , AP9467AGH-HF , AP9467AGM-HF , AP9467AGMT-HF , AP9467GH-HF , AP9467GJ-HF , AP9467GS , AP50T10AGI-HF .
History: BSC035N04LSG | AON6242 | IRFI9634GPBF | ELM5B801QA | AON6266 | KRLML6401 | FDS8435A
Keywords - AP4961GM MOSFET datasheet
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History: BSC035N04LSG | AON6242 | IRFI9634GPBF | ELM5B801QA | AON6266 | KRLML6401 | FDS8435A



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