All MOSFET. AP5321GM-HF Datasheet

 

AP5321GM-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP5321GM-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SO8

 AP5321GM-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP5321GM-HF Datasheet (PDF)

 ..1. Size:94K  ape
 ap5321gm-hf.pdf

AP5321GM-HF AP5321GM-HF

AP5321GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 150m Fast Switching Characteristic ID 2.5A Halogen Free & RoHS Compliant ProductD2D2D1Description D1Advanced Power MOSFETs from APEC provide theG2S2designer with the best combination

 9.1. Size:216K  ape
 ap5322gm.pdf

AP5321GM-HF AP5321GM-HF

AP5322GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 100VD2D2D1 Simple Drive Requirement RDS(ON) 250mD1 Fast Switching Characteristic ID 1.9AG2S2 Halogen Free & RoHS CompliantG1SO-8S1DescriptionD2D1AP5322 series are from Advanced Power innovated designand silico

 9.2. Size:96K  ape
 ap5322gm-hf.pdf

AP5321GM-HF AP5321GM-HF

AP5322GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 100VD2D2D1 Simple Drive Requirement RDS(ON) 250mD1 Fast Switching Characteristic ID 1.9AG2S2 Halogen Free & RoHS CompliantG1SO-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide the designer withthe be

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