All MOSFET. AP5331GM-HF Datasheet

 

AP5331GM-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP5331GM-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SO10

 AP5331GM-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP5331GM-HF Datasheet (PDF)

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 ap5331gm-hf.pdf

AP5331GM-HF AP5331GM-HF

AP5331GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 150V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID 2.3A Halogen Free & RoHS Compliant ProductD2D2D1Description D1Advanced Power MOSFETs from APEC provide theG2S2designer with the best combination

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