All MOSFET. AP5331GM-HF Datasheet

 

AP5331GM-HF Datasheet and Replacement


   Type Designator: AP5331GM-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SO10
 

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AP5331GM-HF Datasheet (PDF)

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AP5331GM-HF

AP5331GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 150V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID 2.3A Halogen Free & RoHS Compliant ProductD2D2D1Description D1Advanced Power MOSFETs from APEC provide theG2S2designer with the best combination

Datasheet: AP50T10GH-HF , AP50T10GI-HF , AP50T10GJ-HF , AP50T10GM-HF , AP50T10GP-HF , AP50T10GS-HF , AP5321GM-HF , AP5322GM-HF , IRF3710 , AP5521GH-HF , AP5521GM-HF , AP55T06GI-HF , AP55T06GS-HF , AP55T10GH-HF , AP55T10GI-HF , AP55T10GP-HF , AP55T10GS-HF .

History: APT3580BN | RSR030N06

Keywords - AP5331GM-HF MOSFET datasheet

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