AP5331GM-HF Specs and Replacement

Type Designator: AP5331GM-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: SO10

AP5331GM-HF substitution

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AP5331GM-HF datasheet

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AP5331GM-HF

AP5331GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 150V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID 2.3A Halogen Free & RoHS Compliant Product D2 D2 D1 Description D1 Advanced Power MOSFETs from APEC provide the G2 S2 designer with the best combination ... See More ⇒

Detailed specifications: AP50T10GH-HF, AP50T10GI-HF, AP50T10GJ-HF, AP50T10GM-HF, AP50T10GP-HF, AP50T10GS-HF, AP5321GM-HF, AP5322GM-HF, AO3400, AP5521GH-HF, AP5521GM-HF, AP55T06GI-HF, AP55T06GS-HF, AP55T10GH-HF, AP55T10GI-HF, AP55T10GP-HF, AP55T10GS-HF

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