AP5331GM-HF Datasheet and Replacement
Type Designator: AP5331GM-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 2.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 85 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: SO10
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AP5331GM-HF Datasheet (PDF)
ap5331gm-hf.pdf

AP5331GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 150V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID 2.3A Halogen Free & RoHS Compliant ProductD2D2D1Description D1Advanced Power MOSFETs from APEC provide theG2S2designer with the best combination
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History: CEM4311 | STV60N06 | AP50T10GS | CEM2281 | AP55T10GH-HF | STW34NM60ND
Keywords - AP5331GM-HF MOSFET datasheet
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History: CEM4311 | STV60N06 | AP50T10GS | CEM2281 | AP55T10GH-HF | STW34NM60ND



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