All MOSFET. AP6618GM-HF Datasheet

 

AP6618GM-HF Datasheet and Replacement


   Type Designator: AP6618GM-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SO8
 

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AP6618GM-HF Datasheet (PDF)

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AP6618GM-HF

AP6618GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 30mD Surface Mount Package ID 7AGS Halogen Free & RoHS Compliant ProductSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

Datasheet: AP60T03GS , AP60T06GJ-HF , AP60T06GP-HF , AP60T10GI-HF , AP60T10GP , AP60T10GS , AP62T03GH , AP62T03GJ , IRF9540N , AP6677GH , AP6679BGH-HF , AP6679BGI-HF , AP6679BGM-HF , AP6679BGP-HF , AP6679GH-HF , AP6679GI-HF , AP6679GJ-HF .

History: IRFSL3107PBF | AON6206

Keywords - AP6618GM-HF MOSFET datasheet

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