All MOSFET. AP6618GM-HF Datasheet

 

AP6618GM-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP6618GM-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.4 nC
   trⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SO8

 AP6618GM-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP6618GM-HF Datasheet (PDF)

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 ap6618gm-hf.pdf

AP6618GM-HF AP6618GM-HF

AP6618GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 30mD Surface Mount Package ID 7AGS Halogen Free & RoHS Compliant ProductSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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