AP6618GM-HF Specs and Replacement

Type Designator: AP6618GM-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SO8

AP6618GM-HF substitution

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AP6618GM-HF datasheet

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 ap6618gm-hf.pdf pdf_icon

AP6618GM-HF

AP6618GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Fast Switching Characteristic RDS(ON) 30m D Surface Mount Package ID 7A G S Halogen Free & RoHS Compliant Product S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of... See More ⇒

Detailed specifications: AP60T03GS, AP60T06GJ-HF, AP60T06GP-HF, AP60T10GI-HF, AP60T10GP, AP60T10GS, AP62T03GH, AP62T03GJ, SKD502T, AP6677GH, AP6679BGH-HF, AP6679BGI-HF, AP6679BGM-HF, AP6679BGP-HF, AP6679GH-HF, AP6679GI-HF, AP6679GJ-HF

Keywords - AP6618GM-HF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs