All MOSFET. FRF9150D Datasheet


FRF9150D MOSFET. Datasheet pdf. Equivalent

Type Designator: FRF9150D

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 23 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 620 nS

Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm

Package: TO254AA

FRF9150D Transistor Equivalent Substitute - MOSFET Cross-Reference Search


FRF9150D Datasheet (PDF)

3.1. frf9150.pdf Size:48K _intersil


FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package • 23A, -100V, rDS(ON) = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts G • Gamma - Meets Pre-RAD Specifications to 100K RAD (Si) S D - Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si) - Performance Permits Limited

Datasheet: FRF250H , FRF250R , FRF254D , FRF254H , FRF254R , FRF450D , FRF450H , FRF450R , IRF1405 , FRF9150H , FRF9150R , FRF9250D , FRF9250H , FRF9250R , FRK150D , FRK150H , FRK150R .


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