All MOSFET. AP6679GR Datasheet

 

AP6679GR Datasheet and Replacement


   Type Designator: AP6679GR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 960 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO262
 

 AP6679GR substitution

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AP6679GR Datasheet (PDF)

 ..1. Size:149K  ape
ap6679gr.pdf pdf_icon

AP6679GR

AP6679GRRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

 7.1. Size:60K  ape
ap6679gp-a ap6679gs-a.pdf pdf_icon

AP6679GR

AP6679GS/P-APb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65AG RoHS CompliantSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-

 7.2. Size:198K  ape
ap6679gs.pdf pdf_icon

AP6679GR

AP6679GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-263(S)ruggedized device desi

 7.3. Size:153K  ape
ap6679gi-hf.pdf pdf_icon

AP6679GR

AP6679GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -30V Single Drive Requirement RDS(ON) 9m Lower On-resistance ID -48AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-220CFM(I)ruggedized dev

Datasheet: AP6679BGM-HF , AP6679BGP-HF , AP6679GH-HF , AP6679GI-HF , AP6679GJ-HF , AP6679GM-HF , AP6679GP , AP6679GP-A-HF , IRFP250 , AP6679GS-A-HF , 2SK662 , 2SK663 , 2SK664 , 2SK665 , 2SK669 , 2SK704 , 2SK709 .

History: LSB55R066GT | PEE28BB | 25N10L-TF3-T | MME70R380PRH | IRFP440R | QS8M51 | CS12N65FA9R

Keywords - AP6679GR MOSFET datasheet

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