All MOSFET. FRF9150R Datasheet

 

FRF9150R Datasheet and Replacement


   Type Designator: FRF9150R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 620 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO254AA
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FRF9150R Datasheet (PDF)

 7.1. Size:48K  intersil
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FRF9150R

FRF9150D, FRF9150R,FRF9150H23A, -100V, 0.140 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 23A, -100V, rDS(ON) = 0.140TO-254AA Second Generation Rad Hard MOSFET Results From New Design ConceptsG Gamma - Meets Pre-RAD Specifications to 100K RAD (Si)SD- Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si)- Performance Permits Limited

Datasheet: FRF254D , FRF254H , FRF254R , FRF450D , FRF450H , FRF450R , FRF9150D , FRF9150H , IRFP250 , FRF9250D , FRF9250H , FRF9250R , FRK150D , FRK150H , FRK150R , FRK160D , FRK160H .

History: IRFP21N60L | STD6N60M2

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