All MOSFET. AP70L02GJ Datasheet

 

AP70L02GJ Datasheet and Replacement


   Type Designator: AP70L02GJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 66 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 475 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-251
 

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AP70L02GJ Datasheet (PDF)

 ..1. Size:81K  ape
 ap70l02gh ap70l02gj.pdf pdf_icon

AP70L02GJ

AP70L02GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow Gate Charge BVDSS 25V DSimple Drive Requirement RDS(ON) 9m Fast Switching ID 66A GSDescriptionGDThe TO-252 package is universally preferred for all commercial-STO-252(H)industrial surface mount app

 6.1. Size:107K  ape
 ap70l02gp ap70l02gs.pdf pdf_icon

AP70L02GJ

AP70L02GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 25VD Simple Drive Requirement RDS(ON) 9m Fast Switching ID 66AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,S TO-263(S)ruggedized device design, low on-resista

Datasheet: AP6942GMT-HF , AP6950GYT-HF , AP6970GN2-HF , AP6980GN2-HF , AP6982GM , AP6982GN2-HF , AP6983GN2-HF , AP70L02GH , IRF3710 , AP70L02GP , AP70L02GS , AP70T03GH , AP70T03GI , AP70T03GJ-HF , AP70T03GP , AP70T03GS , AP72T02GJ-HF .

History: JMTQ35N06A

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