All MOSFET. AP70L02GJ Datasheet

 

AP70L02GJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP70L02GJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 66 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 475 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-251

 AP70L02GJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP70L02GJ Datasheet (PDF)

 ..1. Size:81K  ape
 ap70l02gh ap70l02gj.pdf

AP70L02GJ AP70L02GJ

AP70L02GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow Gate Charge BVDSS 25V DSimple Drive Requirement RDS(ON) 9m Fast Switching ID 66A GSDescriptionGDThe TO-252 package is universally preferred for all commercial-STO-252(H)industrial surface mount app

 6.1. Size:107K  ape
 ap70l02gp ap70l02gs.pdf

AP70L02GJ AP70L02GJ

AP70L02GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 25VD Simple Drive Requirement RDS(ON) 9m Fast Switching ID 66AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,S TO-263(S)ruggedized device design, low on-resista

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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