AP70L02GS Specs and Replacement

Type Designator: AP70L02GS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 66 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 66 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 475 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO-263

AP70L02GS substitution

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AP70L02GS datasheet

 ..1. Size:107K  ape
 ap70l02gp ap70l02gs.pdf pdf_icon

AP70L02GS

AP70L02GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 25V D Simple Drive Requirement RDS(ON) 9m Fast Switching ID 66A G S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-263(S) ruggedized device design, low on-resista... See More ⇒

 6.1. Size:81K  ape
 ap70l02gh ap70l02gj.pdf pdf_icon

AP70L02GS

AP70L02GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 25V D Simple Drive Requirement RDS(ON) 9m Fast Switching ID 66A G S Description G D The TO-252 package is universally preferred for all commercial- S TO-252(H) industrial surface mount app... See More ⇒

Detailed specifications: AP6970GN2-HF, AP6980GN2-HF, AP6982GM, AP6982GN2-HF, AP6983GN2-HF, AP70L02GH, AP70L02GJ, AP70L02GP, IRF3710, AP70T03GH, AP70T03GI, AP70T03GJ-HF, AP70T03GP, AP70T03GS, AP72T02GJ-HF, AP72T03GH, AP72T03GI-HF

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