AP78T10GP-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP78T10GP-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 138.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 68 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 54 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 430 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO-220
AP78T10GP-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP78T10GP-HF Datasheet (PDF)
ap78t10gp-hf.pdf
AP78T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Low On-resistance RDS(ON) 14m Fast Switching Characteristic ID 68AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Grugge
ap78t10gp.pdf
AP78T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Low On-resistance RDS(ON) 14m Fast Switching Characteristic ID 68AG RoHS Compliant & Halogen-FreeSDescriptionAP78T10 series are from Advanced Power innovated designand silicon process technology to achieve the lowest
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