AP85T10GP-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP85T10GP-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 125 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 100 nC
Rise Time (tr): 95 nS
Drain-Source Capacitance (Cd): 770 pF
Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm
Package: TO-220
AP85T10GP-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP85T10GP-HF Datasheet (PDF)
0.1. ap85t10gp-hf.pdf 
Size:59K _ape
AP85T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 8m Fast Switching Characteristic ID 125AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Grugg
5.1. ap85t10gp.pdf Size:159K _ape
AP85T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 8m Fast Switching Characteristic ID3 125AG RoHS Compliant & Halogen-FreeSDescriptionAP85T10 series are from Advanced Power innovated designand silicon process technology to achieve the lowe
6.1. ap85t10gr-hf.pdf Size:55K _ape
AP85T10GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 8m Fast Switching Characteristic ID 125AG RoHS Compliant & Halogen-FreeSDescriptionAP85T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes
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