FRK250H MOSFET. Datasheet pdf. Equivalent
Type Designator: FRK250H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 27 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 600 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO204AE
FRK250H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRK250H Datasheet (PDF)
frk250.pdf
FRK250D, FRK250R,FRK250H27A, 200V, 0.100 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 27A, 200V, RDS(on) = 0.100TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
frk250.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FRK250DESCRIPTION27A, 200V, RDS(on) = 0.1Second Generation Rad Hard MOSFET ResultsFrom New Design ConceptsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIt is specially designed and processed toexhibit minimal characteristic changes to total dose and neutronexposures
frk254.pdf
FRK254D, FRK254R,FRK254H20A, 250V, 0.170 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 20A, 250V, RDS(on) = 0.170TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
Datasheet: FRF9250R , FRK150D , FRK150H , FRK150R , FRK160D , FRK160H , FRK160R , FRK250D , IRFP250 , FRK250R , FRK254D , FRK254H , FRK254R , FRK260D , FRK260H , FRK260R , FRK264D .
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