FRK254D Datasheet and Replacement
Type Designator: FRK254D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 450 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO204AE
FRK254D substitution
FRK254D Datasheet (PDF)
frk254.pdf

FRK254D, FRK254R,FRK254H20A, 250V, 0.170 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 20A, 250V, RDS(on) = 0.170TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
frk250.pdf

FRK250D, FRK250R,FRK250H27A, 200V, 0.100 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 27A, 200V, RDS(on) = 0.100TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
frk250.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FRK250DESCRIPTION27A, 200V, RDS(on) = 0.1Second Generation Rad Hard MOSFET ResultsFrom New Design ConceptsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIt is specially designed and processed toexhibit minimal characteristic changes to total dose and neutronexposures
Datasheet: FRK150H , FRK150R , FRK160D , FRK160H , FRK160R , FRK250D , FRK250H , FRK250R , IRFP250 , FRK254H , FRK254R , FRK260D , FRK260H , FRK260R , FRK264D , FRK264H , FRK264R .
History: NCEP40P30K | IXTP130N10T | NCEP070N10AGU
Keywords - FRK254D MOSFET datasheet
FRK254D cross reference
FRK254D equivalent finder
FRK254D lookup
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History: NCEP40P30K | IXTP130N10T | NCEP070N10AGU



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