AP9412CGM-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9412CGM-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 18.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23 nC
trⓘ - Rise Time: 8.4 nS
Cossⓘ - Output Capacitance: 500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: SO-8
AP9412CGM-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9412CGM-HF Datasheet (PDF)
ap9412cgm-hf.pdf
AP9412CGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 4.8mD Fast Switching Characteristic ID 18.2AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combinat
ap9412agm-hf.pdf
AP9412AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Ultra_Low On-resistance RDS(ON) 6mDD Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-Free SSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination o
ap9412gh ap9412gj.pdf
AP9412GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 73AGSDescriptionThe Advanced Power MOSFETs from APEC provide the designer with GDSthe best combination of fast switching, ruggedized device design, low
ap9412gp.pdf
AP9412GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 73AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and
ap9412agp.pdf
AP9412AGPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 68AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance an
ap9412agi.pdf
AP9412AGIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30VD Single Drive Requirement RDS(ON) 6m Full Isolation Package ID 68AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance
ap9412agh.pdf
AP9412AGHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 68AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with GDSthe best combination of fast switching, ruggedized device design,TO-252(H
ap9412gi.pdf
AP9412GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30VD Single Drive Requirement RDS(ON) 6m Full Isolation Package ID 68AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, low on-resistance
ap9412agm.pdf
AP9412AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Ultra_Low On-resistance RDS(ON) 6mDD Fast Switching Characteristic ID 16AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized devic
ap9412bgm-hf.pdf
AP9412BGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 6mD Fast Switching Characteristic ID 18AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fas
ap9412bgm.pdf
AP9412BGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 6mD Fast Switching Characteristic ID 18AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast switching, ruggedized device desig
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: MTB095N10KRN3 | SI2327DS | IXTA220N075T7
History: MTB095N10KRN3 | SI2327DS | IXTA220N075T7
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