AP9435GM-HF Specs and Replacement
Type Designator: AP9435GM-HF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.7 nS
Cossⓘ -
Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SO-8
- MOSFET ⓘ Cross-Reference Search
AP9435GM-HF datasheet
..1. Size:169K ape
ap9435gm-hf.pdf 
AP9435GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low Gate Charge RDS(ON) 50m D Fast Switching ID -5.3A G S RoHS Compliant S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic... See More ⇒
6.1. Size:177K ape
ap9435gm.pdf
AP9435GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low Gate Charge RDS(ON) 50m D Fast Switching ID -5.3A G S S S SO-8 Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on... See More ⇒
6.2. Size:805K cn vbsemi
ap9435gm.pdf
AP9435GM www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top ... See More ⇒
7.1. Size:98K ape
ap9435gh ap9435gj.pdf
AP9435GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching ID - 20A G S Description G D Advanced Power MOSFETs utilized advanced processing techniques to S TO-252(H) achieve the lowest possible on-resistance, extremely efficient and cost- ... See More ⇒
7.2. Size:95K ape
ap9435gp-hf.pdf
AP9435GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID - 15A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized... See More ⇒
7.3. Size:95K ape
ap9435gk-hf.pdf
AP9435GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Low Gate Charge RDS(ON) 50m Fast Switching Characteristic ID -6A S D RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchi... See More ⇒
7.4. Size:94K ape
ap9435gp.pdf
AP9435GP RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching ID - 15A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effecti... See More ⇒
7.5. Size:99K ape
ap9435gj-hf.pdf
AP9435GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID - 20A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to G D S TO-252(H) achieve the lowest poss... See More ⇒
7.6. Size:57K ape
ap9435gg-hf.pdf
AP9435GG-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Fast Switching Characteristic RDS(ON) 50m Single Drive Requirement ID - 4.2A G RoHS Compliant & Halogen-Free S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge... See More ⇒
7.7. Size:2952K cn vbsemi
ap9435gk.pdf
AP9435GK www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Load ... See More ⇒
7.8. Size:833K cn vbsemi
ap9435gg.pdf
AP9435GG www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.056 at VGS = - 4.5 V - 6.0 APPLICATIONS Load Switch Battery Switch D S G G D S D P-Channel MOSFET ABS... See More ⇒
7.9. Size:880K cn vbsemi
ap9435gh.pdf
AP9435GH www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.033 at VGS = - 10 V - 26 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.046 at VGS = - 4.5 V - 21 APPLICATIONS Load Switch Notebook Adaptor Switch S TO-252 G G D S D Top View P-Ch... See More ⇒
Detailed specifications: AP9430GYT-HF, AP9431GH-HF, AP9432GYT-HF, AP9434GM-HF, AP9435GG-HF, AP9435GH, AP9435GJ, AP9435GK-HF, AON7506, AP9435GP, AP9440GYT-HF, AP9450GYT-HF, AP9451GG-HF, AP9452AGG-HF, AP9452GG-HF, AP9465AGH, AP9465AGJ
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