All MOSFET. AP9478GM Datasheet

 

AP9478GM Datasheet and Replacement


   Type Designator: AP9478GM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: SO-8
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AP9478GM Datasheet (PDF)

 ..1. Size:94K  ape
ap9478gm.pdf pdf_icon

AP9478GM

AP9478GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VDD Lower Gate Charge RDS(ON) 64mDD Fast Switching Characteristic ID 4.8AG RoHS CompliantSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switchin

 9.1. Size:94K  ape
ap9475gm-hf.pdf pdf_icon

AP9478GM

AP9475GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID 6.9AGSS RoHS Compliant & Halogen-FreeSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fa

 9.2. Size:217K  ape
ap9476gm.pdf pdf_icon

AP9478GM

AP9476GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60VDD Simple Drive Requirement RDS(ON) 21mDD Fast Switching Characteristic ID 7.8AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device desi

 9.3. Size:69K  ape
ap9477gm.pdf pdf_icon

AP9478GM

AP9477GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS 60V DDLower Gate Charge RDS(ON) 90m DDFast Switching Characteristic ID 4A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best co

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB22N03S4L-15

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