FRK460H Specs and Replacement

Type Designator: FRK460H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 800 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO204AE

FRK460H substitution

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FRK460H datasheet

 8.1. Size:53K  intersil
 frk460.pdf pdf_icon

FRK460H

FRK460D, FRK460R, FRK460H 17A, 500V, 0.400 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 17A, 500V, RDS(on) = 0.400 TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒

Detailed specifications: FRK254R, FRK260D, FRK260H, FRK260R, FRK264D, FRK264H, FRK264R, FRK460D, IRF520, FRK460R, FRK9150D, FRK9150H, FRK9150R, FRK9160D, FRK9160H, FRK9160R, FRK9260D

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