FRK460H Datasheet and Replacement
Type Designator: FRK460H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 800 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO204AE
FRK460H substitution
FRK460H Datasheet (PDF)
frk460.pdf
FRK460D, FRK460R,FRK460H17A, 500V, 0.400 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 17A, 500V, RDS(on) = 0.400TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
Datasheet: FRK254R , FRK260D , FRK260H , FRK260R , FRK264D , FRK264H , FRK264R , FRK460D , IRF520 , FRK460R , FRK9150D , FRK9150H , FRK9150R , FRK9160D , FRK9160H , FRK9160R , FRK9260D .
History: QM02N65D | SQJ202EP | IRFR3504PBF | NCE65N760K | SSU2N60B
Keywords - FRK460H MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: QM02N65D | SQJ202EP | IRFR3504PBF | NCE65N760K | SSU2N60B
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