FRK9150H Specs and Replacement

Type Designator: FRK9150H

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 672 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO204AE

FRK9150H substitution

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FRK9150H datasheet

 7.1. Size:54K  intersil
 frk9150.pdf pdf_icon

FRK9150H

FRK9150D, FRK9150R, FRK9150H 26A, -100V, 0.125 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 26A, -100V, RDS(on) = 0.125 TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD... See More ⇒

 9.1. Size:53K  intersil
 frk9160.pdf pdf_icon

FRK9150H

FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 40A, -100V, RDS(on) = 0.085 TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD... See More ⇒

Detailed specifications: FRK260R, FRK264D, FRK264H, FRK264R, FRK460D, FRK460H, FRK460R, FRK9150D, IRFZ24N, FRK9150R, FRK9160D, FRK9160H, FRK9160R, FRK9260D, FRK9260H, FRK9260R, FRL130D

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