AP9576GJ Specs and Replacement
Type Designator: AP9576GJ
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO-251
AP9576GJ substitution
- MOSFET ⓘ Cross-Reference Search
AP9576GJ datasheet
ap9576gm-hf.pdf
AP9576GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance BVDSS -60V D D D Simple Drive Requirement RDS(ON) 90m D Fast Switching Characteristic ID -4A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of ... See More ⇒
ap9576gh.pdf
AP9576GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID -14A G S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications and suited for low volta... See More ⇒
ap9576gm.pdf
AP9576GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance BVDSS -60V D D Simple Drive Requirement D RDS(ON) 90m D Fast Switching Characteristic ID -4A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best... See More ⇒
Detailed specifications: AP9575AGS-HF, AP9575GH-HF, AP9575GI-HF, AP9575GJ-HF, AP9575GM, AP9575GP-HF, AP9575GS-HF, AP9576GH, STP80NF70, AP9576GM, AP9577GI, AP9578GH-HF, AP9578GJ-HF, AP9578GM, AP9578GP, AP9578GS, AP9579GH-HF
Keywords - AP9576GJ MOSFET specs
AP9576GJ cross reference
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AP9576GJ replacement
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History: AP98T03GW-HF
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