AP9576GJ Datasheet and Replacement
Type Designator: AP9576GJ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 36.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO-251
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AP9576GJ Datasheet (PDF)
ap9576gm-hf.pdf

AP9576GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS -60VDDD Simple Drive Requirement RDS(ON) 90mD Fast Switching Characteristic ID -4AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of
ap9576gh.pdf

AP9576GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID -14AGSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrial STO-252(H)surface mount applications and suited for low volta
ap9576gm.pdf

AP9576GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLower On-resistance BVDSS -60V DDSimple Drive Requirement D RDS(ON) 90m DFast Switching Characteristic ID -4A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best
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History: IRF7473 | 2SK1571



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