AP9578GH-HF Specs and Replacement
Type Designator: AP9578GH-HF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO-252
AP9578GH-HF substitution
- MOSFET ⓘ Cross-Reference Search
AP9578GH-HF datasheet
ap9578gh.pdf
AP9578GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10A G S Description AP9578 series are from Advanced Power innovated design and G D S silicon process technology to achieve the lowest possible on- TO-252(H) ... See More ⇒
ap9578gh ap9578gj.pdf
AP9578GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10A G S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications and suited for low volt... See More ⇒
ap9578gh j-hf.pdf
AP9578GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10A G S Description The TO-252 package is widely preferred for all commercial-industrial G D S surface mount applications and suited for low voltage applica... See More ⇒
Detailed specifications: AP9575GJ-HF, AP9575GM, AP9575GP-HF, AP9575GS-HF, AP9576GH, AP9576GJ, AP9576GM, AP9577GI, AO4407, AP9578GJ-HF, AP9578GM, AP9578GP, AP9578GS, AP9579GH-HF, AP9579GI-HF, AP9579GJ-HF, AP9579GM-HF
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