AP9578GJ-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9578GJ-HF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 28 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 80 pF
Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
Package: TO-251
AP9578GJ-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9578GJ-HF Datasheet (PDF)
2.1. ap9578gh ap9578gj.pdf 
Size:217K _a-power
AP9578GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Lower On-resistance BVDSS -60V ▼ Simple Drive Requirement RDS(ON) 160mΩ ▼ Fast Switching Characteristic ID -10A G S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications and suited for low volt
3.1. ap9578gi-hf.pdf Size:73K _a-power
AP9578GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower Gate Charge D BVDSS -60V ▼ Simple Drive Requirement RDS(ON) 160mΩ ▼ Fast Switching Characteristic ID -9A G ▼ Halogen Free & RoHS Compliant S Description AP9578 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p
3.2. ap9578gp.pdf Size:196K _a-power
AP9578GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Lower On-resistance BVDSS -60V Ў Simple Drive Requirement RDS(ON) 160m? Ў Fast Switching Characteristic ID -10A G S Description The Advanced Power MOSFETs from APEC provide the designer with G D the best combination of fast switching, ruggedized device design, low S TO-
3.3. ap9578gh.pdf Size:232K _a-power
AP9578GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower On-resistance D BVDSS -60V ▼ Simple Drive Requirement RDS(ON) 160mΩ ▼ Fast Switching Characteristic ID -10A G S Description AP9578 series are from Advanced Power innovated design and G D S silicon process technology to achieve the lowest possible on- TO-252(H)
3.4. ap9578gm.pdf Size:180K _a-power
AP9578GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Lower On-resistance BVDSS -60V D D D Ў Simple Drive Requirement RDS(ON) 170m? D Ў Fast Switching Characteristic ID -3A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,
3.5. ap9578gs.pdf Size:200K _a-power
AP9578GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Lower On-resistance BVDSS -60V Ў Simple Drive Requirement RDS(ON) 160m? Ў Fast Switching Characteristic ID -10A G S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-263(S) ruggedized device design,
3.6. ap9578gh j-hf.pdf Size:100K _a-power
AP9578GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Lower On-resistance BVDSS -60V Ў Simple Drive Requirement RDS(ON) 160m? Ў Fast Switching Characteristic ID -10A G S Description The TO-252 package is widely preferred for all commercial-industrial G D S surface mount applications and suited for low voltage applications T
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