AP9770GT-HF Datasheet and Replacement
Type Designator: AP9770GT-HF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.08 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 1.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.8 nC
trⓘ - Rise Time: 5.4 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-92
AP9770GT-HF Datasheet (PDF)
ap9770gt-hf.pdf

AP9770GT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -60V Through Hole Type RDS(ON) 500m RoHS Compliant & Halogen-Free ID -1.5AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,low on-resistance and cost-effectiveness.
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: WM02P06H | KIA7N60H-262 | CJP01N65B | SI4404DY | UF830 | 25P10G | BSC016N06NS
Keywords - AP9770GT-HF MOSFET datasheet
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History: WM02P06H | KIA7N60H-262 | CJP01N65B | SI4404DY | UF830 | 25P10G | BSC016N06NS



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