AP98T03GS-HF Specs and Replacement

Type Designator: AP98T03GS-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 78 nS

Cossⓘ - Output Capacitance: 1210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO-263

AP98T03GS-HF substitution

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AP98T03GS-HF datasheet

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 ap98t03gs.pdf pdf_icon

AP98T03GS-HF

AP98T03GP/S-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200A G S Description AP98T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance ... See More ⇒

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 ap98t03gp ap98t03gs.pdf pdf_icon

AP98T03GS-HF

AP98T03GP/S RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- r... See More ⇒

 6.1. Size:57K  ape
 ap98t03gw-hf.pdf pdf_icon

AP98T03GS-HF

AP98T03GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Ultra-low On-resistance RDS(ON) 3m Fast Switching Characteristic ID 145A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugg... See More ⇒

 6.2. Size:93K  ape
 ap98t03gps-hf.pdf pdf_icon

AP98T03GS-HF

AP98T03GP/S-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-... See More ⇒

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Detailed specifications: AP9770GT-HF, AP97T07AGP-HF, AP97T07GP-HF, AP97T07GR-HF, AP97T07GW-HF, AP9870GH-HF, AP9871GH-HF, AP98T03GP-HF, IRFP460, AP98T03GW-HF, AP98T06GI-HF, AP98T06GP, AP98T06GS-HF, AP98T07GP-HF, AP9918GJ, AP9920GEO, AP9922AGEO-HF

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