AP98T03GS-HF. Аналоги и основные параметры
Наименование производителя: AP98T03GS-HF
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 156 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 78 ns
Cossⓘ - Выходная емкость: 1210 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
Тип корпуса: TO-263
Аналог (замена) для AP98T03GS-HF
- подборⓘ MOSFET транзистора по параметрам
AP98T03GS-HF даташит
ap98t03gs.pdf
AP98T03GP/S-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200A G S Description AP98T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance
ap98t03gp ap98t03gs.pdf
AP98T03GP/S RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- r
ap98t03gw-hf.pdf
AP98T03GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Ultra-low On-resistance RDS(ON) 3m Fast Switching Characteristic ID 145A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugg
ap98t03gps-hf.pdf
AP98T03GP/S-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-
Другие IGBT... AP9770GT-HF, AP97T07AGP-HF, AP97T07GP-HF, AP97T07GR-HF, AP97T07GW-HF, AP9870GH-HF, AP9871GH-HF, AP98T03GP-HF, IRFP460, AP98T03GW-HF, AP98T06GI-HF, AP98T06GP, AP98T06GS-HF, AP98T07GP-HF, AP9918GJ, AP9920GEO, AP9922AGEO-HF
History: HGA2K4N25ML
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH
Popular searches
2n3644 | 2sc2240bl | 2sc1913 | c2314 transistor | c2482 transistor | 2sc1222 replacement | 2sa725 | c5242 transistor




