All MOSFET. AP9918GJ Datasheet

 

AP9918GJ Datasheet and Replacement


   Type Designator: AP9918GJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO-251
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AP9918GJ Datasheet (PDF)

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AP9918GJ

AP9918GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 20V DCapable of 2.5V gate drive RDS(ON) 14m Low drive current ID 45A GSurface mount package SDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-2

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 ap9918gh ap9918gj.pdf pdf_icon

AP9918GJ

AP9918GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low on-resistance BVDSS 20VD Capable of 2.5V gate drive RDS(ON) 14m Low drive current ID 45A Surface mount package GSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggediz

 8.1. Size:104K  1
 ap9918h ap9918j.pdf pdf_icon

AP9918GJ

AP9918H/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 20V DCapable of 2.5V gate drive RDS(ON) 14m Low drive current ID 45A GSurface mount package SDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the b

 9.1. Size:83K  ape
 ap9915h ap9915j.pdf pdf_icon

AP9918GJ

AP9915H/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 20V DCapable of 2.5V gate drive RDS(ON) 50m Low drive current ID 20A GSingle Drive Requirement SDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with th

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