AP9965GEH MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9965GEH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 31.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 27 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.5 nC
trⓘ - Rise Time: 6.7 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO-252
AP9965GEH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9965GEH Datasheet (PDF)
ap9965geh ap9965gej.pdf
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ap9963gp-hf.pdf
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ap9967gh-hf.pdf
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ap9962agm-hf.pdf
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ap9962gma.pdf
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ap9962agp-hf.pdf
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ap9960gm-hf.pdf
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ap9967gm-hf.pdf
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ap9962gm-hf.pdf
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ap9966gm-hf.pdf
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ap9962agd.pdf
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ap9963gi-hf.pdf
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ap9960agm-hf.pdf
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ap9962agm.pdf
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ap9963gp.pdf
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ap9962gm.pdf
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