AP9972GH-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9972GH-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 89.3 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 60 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 58 nS
Drain-Source Capacitance (Cd): 280 pF
Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm
Package: TO-252
AP9972GH-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9972GH-HF PDF doc:
1.1. ap9972gh-hf.pdf 
Size:94K _a-power
AP9972GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower Gate Charge RDS(ON) 18m? Ў Fast Switching Characteristic ID 60A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized de
3.1. ap9972gi-hf.pdf Size:95K _a-power
AP9972GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low Gate Charge D BVDSS 60V Ў Single Drive Requirement RDS(ON) 18m? Ў Lower On-resistance ID 35A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D S ruggedized device desi
3.2. ap9972gs_p-hf.pdf Size:99K _a-power
AP9972GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low Gate Charge D BVDSS 60V Ў Single Drive Requirement RDS(ON) 18m? Ў RoHS Compliant & Halogen-Free ID 60A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device design, low on-
3.3. ap9972gr.pdf Size:95K _a-power
AP9972GR RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low Gate Charge BVDSS 60V D Ў Single Drive Requirement RDS(ON) 18m? Ў RoHS Compliant ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G
Datasheet: AP9971GI-HF , AP9971GJ , AP9971GM-HF , AP9971GP-HF , AP9971GS-HF , AP9972AGI , AP9972AGP-HF , AP9972AGR-HF , 2N5485 , AP9972GI-HF , AP9972GP-HF , AP9972GR , AP9972GS-HF , AP9973GD , AP9973GH-HF , AP9973GI , AP9973GJ-HF .
