AP9972GH-HF
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP9972GH-HF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 89.3
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 60
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 32
nC
trⓘ -
Время нарастания: 58
ns
Cossⓘ - Выходная емкость: 280
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018
Ohm
Тип корпуса:
TO-252
Аналог (замена) для AP9972GH-HF
AP9972GH-HF
Datasheet (PDF)
..1. Size:94K ape
ap9972gh-hf.pdf 
AP9972GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 18m Fast Switching Characteristic ID 60AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDrugge
6.1. Size:230K ape
ap9972gh.pdf 
AP9972GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 18m Fast Switching Characteristic ID 60AG RoHS Compliant & Halogen-FreeSDescriptionAP9972 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest pos
7.1. Size:165K ape
ap9972gs.pdf 
AP9972GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60AGSDescriptionAP9972 series are from Advanced Power innovated design and siliconprocess technology to achieve th
7.2. Size:153K ape
ap9972gp.pdf 
AP9972GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60AGSDescriptionAP9972 series are from Advanced Power innovated design and siliconprocess technology to achieve th
7.3. Size:99K ape
ap9972gs p-hf.pdf 
AP9972GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DSTO-263(S)ruggedized device design,
7.4. Size:95K ape
ap9972gi-hf.pdf 
AP9972GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 18m Lower On-resistance ID 35AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDSruggedized dev
7.5. Size:95K ape
ap9972gr.pdf 
AP9972GRRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 18m RoHS Compliant ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiven
7.6. Size:211K ape
ap9972gi.pdf 
AP9972GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 18m Lower On-resistance ID 35AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design
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