AP9977AGM
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9977AGM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 3.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7
nC
trⓘ - Rise Time: 7.5
nS
Cossⓘ -
Output Capacitance: 35
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
SO-8
AP9977AGM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9977AGM
Datasheet (PDF)
..1. Size:180K ape
ap9977agm.pdf
AP9977AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 60VD2D2 Single Drive Requirement RDS(ON) 100mD1D1 Surface Mount Package ID 3.6AG2S2G1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide the designer withD2D1the best combination of fast switching, rug
6.1. Size:106K ape
ap9977agh-hf.pdf
AP9977AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 9AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GDSTO-2
6.2. Size:62K ape
ap9977agh.pdf
AP9977AGHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with GDSTO-252(H)the best combination of fast switching, ruggedized device design,lo
8.1. Size:207K ape
ap9977gjv.pdf
AP9977GJVHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Performance ID 11AG RoHS Compliant & Halogen-FreeSDescriptionAP9977 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible
8.2. Size:101K ape
ap9977gh-hf ap9977gj-hf.pdf
AP9977GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 100m Surface Mount Package ID 11AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized d
8.3. Size:212K ape
ap9977gm.pdf
AP9977GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 60VD2 Single Drive Requirement RDS(ON) 100mD2D1 Surface Mount Package ID 3.3AD1G2S2G1S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device des
8.4. Size:181K ape
ap9977gm-hf.pdf
AP9977GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 60VD2D2D1 Simple Drive Requirement RDS(ON) 100mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP9977 series are from Advanced Power innovated design andD2D1silicon process tech
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