AP9977AGM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP9977AGM
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 7 nC
trⓘ - Время нарастания: 7.5 ns
Cossⓘ - Выходная емкость: 35 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: SO-8
AP9977AGM Datasheet (PDF)
ap9977agm.pdf
AP9977AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 60VD2D2 Single Drive Requirement RDS(ON) 100mD1D1 Surface Mount Package ID 3.6AG2S2G1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide the designer withD2D1the best combination of fast switching, rug
ap9977agh-hf.pdf
AP9977AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 9AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GDSTO-2
ap9977agh.pdf
AP9977AGHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with GDSTO-252(H)the best combination of fast switching, ruggedized device design,lo
ap9977gjv.pdf
AP9977GJVHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Performance ID 11AG RoHS Compliant & Halogen-FreeSDescriptionAP9977 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible
ap9977gh-hf ap9977gj-hf.pdf
AP9977GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 100m Surface Mount Package ID 11AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized d
ap9977gm.pdf
AP9977GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 60VD2 Single Drive Requirement RDS(ON) 100mD2D1 Surface Mount Package ID 3.3AD1G2S2G1S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device des
ap9977gm-hf.pdf
AP9977GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 60VD2D2D1 Simple Drive Requirement RDS(ON) 100mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP9977 series are from Advanced Power innovated design andD2D1silicon process tech
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: APM3009NG | BLF7G24L-140 | FS10VS-5
History: APM3009NG | BLF7G24L-140 | FS10VS-5
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918