All MOSFET. AP9980GH Datasheet

 

AP9980GH Datasheet and Replacement


   Type Designator: AP9980GH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 21.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO-252
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AP9980GH Datasheet (PDF)

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AP9980GH

AP9980GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AGSDescriptionGDSAdvanced Power MOSFETs from APEC provide the TO-252(H)designer with the best combination of fast switching,ruggedized device design, lo

 0.1. Size:233K  ape
 ap9980gh-hf.pdf pdf_icon

AP9980GH

AP9980GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AG RoHS Compliant & Halogen-FreeSDescriptionAP9980 series are from Advanced Power innovated design andGDSsilicon process technology to achieve the lowe

 0.2. Size:100K  ape
 ap9980gh-hf ap9980gj-hf.pdf pdf_icon

AP9980GH

AP9980GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDSdesigner with the best combination of fast switching,TO-

 7.1. Size:218K  ape
 ap9980gj.pdf pdf_icon

AP9980GH

AP9980GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AGSDescriptionGDSAdvanced Power MOSFETs from APEC provide the TO-252(H)designer with the best combination of fast switching,ruggedized device design, lo

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP9T18GEJ | HM3207

Keywords - AP9980GH MOSFET datasheet

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