FRL430H Specs and Replacement

Type Designator: FRL430H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO205AF

FRL430H substitution

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FRL430H datasheet

 8.1. Size:53K  intersil
 frl430.pdf pdf_icon

FRL430H

FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 2A, 500V, RDS(on) = 2.50 TO-205AF Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒

Detailed specifications: FRL230D, FRL230H, FRL230R, FRL230R4, FRL234D, FRL234H, FRL234R, FRL430D, RU7088R, FRL430R, FRL9130D, FRL9130H, FRL9130R, FRL9230D, FRL9230H, FRL9230R, FRM130D

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.