AP9992AGP-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9992AGP-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 166 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 161 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 92 nC
Rise Time (tr): 82 nS
Drain-Source Capacitance (Cd): 870 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm
Package: TO-220
AP9992AGP-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9992AGP-HF Datasheet (PDF)
1.1. ap9992agp-hf.pdf 
Size:130K _a-power
AP9992AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.5m? Ў Lower Gate Charge ID 161A G Ў RoHS Compliant & Halogen-Free S Description AP9992A series are from Advanced Power innovated design and silicon The Advanced Power MOSFETs from APEC provide the process
2.1. ap9992agi-hf.pdf Size:92K _a-power
AP9992AGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.5m? Ў Fast Switching Characteristic ID 80A G Ў RoHS Compliant & Halogen-Free S Description AP9992A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possib
4.1. ap9992gr-hf.pdf Size:132K _a-power
AP9992GR-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.5m? Ў Fast Switching Characteristic ID 165A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the The Advanced Power MOSFETs from APEC provide the be
4.2. ap9992gr.pdf Size:233K _a-power
AP9992GR-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 60V ▼ Lower On-resistance RDS(ON) 3.5mΩ ▼ Fast Switching Characteristic ID 165A G ▼ RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the The Advanced Power MOSFETs from APEC provide
4.3. ap9992gi-hf.pdf Size:56K _a-power
AP9992GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.5m? Ў Fast Switching Characteristic ID 84A G Ў RoHS Compliant & Halogen-Free S Description AP9992 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible
4.4. ap9992gp-a-hf.pdf Size:55K _a-power
AP9992GP-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 2.99m? Ў Fast Switching Characteristic ID 180A G Ў RoHS Compliant & Halogen-Free S Description AP9992 series are from Advanced Power innovated design and silicon process technology to achieve the lowest poss
4.5. ap9992gp-hf.pdf Size:59K _a-power
AP9992GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.5m? Ў Fast Switching Characteristic ID 165A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the The Advanced Power MOSFETs from APEC provide the designer with the be
Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .
LIST
Last Update
MOSFET: CMB1405 | CMP1405 | JCS4N60F | JCS4N60C | JCS4N60B | JCS4N60S | JCS4N60R | JCS4N60V | MDU2657 | OSG55R190PF | OSG55R190FF | OSG55R190DF | OSG55R190AF | PTP04N04N | RU7088R3 |