All MOSFET. AP9992AGP-HF Datasheet

 

AP9992AGP-HF MOSFET. Datasheet pdf. Equivalent

Type Designator: AP9992AGP-HF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 166 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 161 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 92 nC

Rise Time (tr): 82 nS

Drain-Source Capacitance (Cd): 870 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm

Package: TO-220

AP9992AGP-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP9992AGP-HF Datasheet (PDF)

1.1. ap9992agp-hf.pdf Size:130K _a-power

AP9992AGP-HF AP9992AGP-HF

AP9992AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.5m? Ў Lower Gate Charge ID 161A G Ў RoHS Compliant & Halogen-Free S Description AP9992A series are from Advanced Power innovated design and silicon The Advanced Power MOSFETs from APEC provide the process

2.1. ap9992agi-hf.pdf Size:92K _a-power

AP9992AGP-HF AP9992AGP-HF

AP9992AGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.5m? Ў Fast Switching Characteristic ID 80A G Ў RoHS Compliant & Halogen-Free S Description AP9992A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possib

 4.1. ap9992gr.pdf Size:233K _a-power

AP9992AGP-HF AP9992AGP-HF

AP9992GR-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 60V ▼ Lower On-resistance RDS(ON) 3.5mΩ ▼ Fast Switching Characteristic ID 165A G ▼ RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the The Advanced Power MOSFETs from APEC provide

4.2. ap9992gp-hf.pdf Size:59K _a-power

AP9992AGP-HF AP9992AGP-HF

AP9992GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.5m? Ў Fast Switching Characteristic ID 165A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the The Advanced Power MOSFETs from APEC provide the designer with the be

 4.3. ap9992gi-hf.pdf Size:56K _a-power

AP9992AGP-HF AP9992AGP-HF

AP9992GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.5m? Ў Fast Switching Characteristic ID 84A G Ў RoHS Compliant & Halogen-Free S Description AP9992 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible

4.4. ap9992gr-hf.pdf Size:132K _a-power

AP9992AGP-HF AP9992AGP-HF

AP9992GR-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.5m? Ў Fast Switching Characteristic ID 165A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the The Advanced Power MOSFETs from APEC provide the be

 4.5. ap9992gp-a-hf.pdf Size:55K _a-power

AP9992AGP-HF AP9992AGP-HF

AP9992GP-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 2.99m? Ў Fast Switching Characteristic ID 180A G Ў RoHS Compliant & Halogen-Free S Description AP9992 series are from Advanced Power innovated design and silicon process technology to achieve the lowest poss

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top