AP9992AGP-HF
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP9992AGP-HF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 166
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 161
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 92
nC
trⓘ -
Время нарастания: 82
ns
Cossⓘ - Выходная емкость: 870
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0035
Ohm
Тип корпуса:
TO-220
Аналог (замена) для AP9992AGP-HF
AP9992AGP-HF
Datasheet (PDF)
..1. Size:130K ape
ap9992agp-hf.pdf 
AP9992AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Lower Gate Charge ID 161AG RoHS Compliant & Halogen-FreeSDescriptionAP9992A series are from Advanced Power innovated design and siliconThe Advanced Power MOSFETs from APEC provide the
6.1. Size:92K ape
ap9992agi-hf.pdf 
AP9992AGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP9992A series are from Advanced Power innovated design andsilicon process technology to achieve the lowes
8.1. Size:59K ape
ap9992gp-hf.pdf 
AP9992GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theThe Advanced Power MOSFETs from APEC provide thedesigner wit
8.2. Size:132K ape
ap9992gr-hf.pdf 
AP9992GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theThe Advanced Power MOSFETs from APEC provide
8.3. Size:56K ape
ap9992gi-hf.pdf 
AP9992GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 84AG RoHS Compliant & Halogen-FreeSDescriptionAP9992 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest
8.4. Size:55K ape
ap9992gp-a-hf.pdf 
AP9992GP-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 2.99m Fast Switching Characteristic ID 180AG RoHS Compliant & Halogen-FreeSDescriptionAP9992 series are from Advanced Power innovated design andsilicon process technology to achieve the low
8.5. Size:233K ape
ap9992gr.pdf 
AP9992GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theThe Advanced Power MOSFETs from APEC provide
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