All MOSFET. FRL9130H Datasheet

 

FRL9130H Datasheet and Replacement


   Type Designator: FRL9130H
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 124 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO205AF
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FRL9130H Datasheet (PDF)

 7.1. Size:53K  intersil
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FRL9130H

FRL9130D, FRL9130R,FRL9130H5A, -100V, 0.550 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 5A, -100V, RDS(on) = 0.550TO-205AF Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(S

Datasheet: FRL230R4 , FRL234D , FRL234H , FRL234R , FRL430D , FRL430H , FRL430R , FRL9130D , 5N50 , FRL9130R , FRL9230D , FRL9230H , FRL9230R , FRM130D , FRM130H , FRM130R , FRM140D .

History: IRF7473 | 2SK1571

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