All MOSFET. AP99T06GP-HF Datasheet

 

AP99T06GP-HF Datasheet and Replacement


   Type Designator: AP99T06GP-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 190 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 91 nC
   trⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 1120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO-220
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AP99T06GP-HF Datasheet (PDF)

 ..1. Size:95K  ape
 ap99t06gp-hf.pdf pdf_icon

AP99T06GP-HF

AP99T06GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 120AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugged

 7.1. Size:94K  ape
 ap99t06agp-hf.pdf pdf_icon

AP99T06GP-HF

AP99T06AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 135AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

 7.2. Size:59K  ape
 ap99t06agi-hf.pdf pdf_icon

AP99T06GP-HF

AP99T06AGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 76AG RoHS Compliant & Halogen-FreeSDescriptionAP99T06A series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

 8.1. Size:94K  ape
 ap99t03gp-hf.pdf pdf_icon

AP99T06GP-HF

AP99T03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G

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Keywords - AP99T06GP-HF MOSFET datasheet

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