Справочник MOSFET. AP99T06GP-HF

 

AP99T06GP-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP99T06GP-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 190 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 78 ns
   Cossⓘ - Выходная емкость: 1120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0042 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для AP99T06GP-HF

 

 

AP99T06GP-HF Datasheet (PDF)

 ..1. Size:95K  ape
 ap99t06gp-hf.pdf

AP99T06GP-HF AP99T06GP-HF

AP99T06GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 120AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugged

 7.1. Size:94K  ape
 ap99t06agp-hf.pdf

AP99T06GP-HF AP99T06GP-HF

AP99T06AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 135AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

 7.2. Size:59K  ape
 ap99t06agi-hf.pdf

AP99T06GP-HF AP99T06GP-HF

AP99T06AGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 76AG RoHS Compliant & Halogen-FreeSDescriptionAP99T06A series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

 8.1. Size:94K  ape
 ap99t03gp-hf.pdf

AP99T06GP-HF AP99T06GP-HF

AP99T03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G

 8.2. Size:91K  ape
 ap99t03gs-hf.pdf

AP99T06GP-HF AP99T06GP-HF

AP99T03GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200AG RoHS Compliant & Halogen-FreeSDescriptionAP99T03 series are from Advanced Power innovated designand silicon process technology to achieve the

 8.3. Size:206K  ape
 ap99t03gs.pdf

AP99T06GP-HF AP99T06GP-HF

AP99T03GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID3 200AG RoHS Compliant & Halogen-FreeSDescriptionAP99T03 series are from Advanced Power innovated designand silicon process technology to achieve th

 8.4. Size:195K  ape
 ap99t03gp.pdf

AP99T06GP-HF AP99T06GP-HF

AP99T03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID3 200AG RoHS Compliant & Halogen-FreeSDescriptionAP99T03 series are from Advanced Power innovated designand silicon process technology to achieve th

 8.5. Size:91K  ape
 ap99t03gr-hf.pdf

AP99T06GP-HF AP99T06GP-HF

AP99T03GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200AG RoHS Compliant & Halogen-FreeSDescriptionAP99T03 series are from Advanced Power innovated design andsilicon process technology to achieve the

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