FRL9130R Datasheet and Replacement
Type Designator: FRL9130R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 124 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: TO205AF
FRL9130R substitution
FRL9130R Datasheet (PDF)
frl9130.pdf

FRL9130D, FRL9130R,FRL9130H5A, -100V, 0.550 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 5A, -100V, RDS(on) = 0.550TO-205AF Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(S
Datasheet: FRL234D , FRL234H , FRL234R , FRL430D , FRL430H , FRL430R , FRL9130D , FRL9130H , IRFB7545 , FRL9230D , FRL9230H , FRL9230R , FRM130D , FRM130H , FRM130R , FRM140D , FRM140H .
History: IPN60R360P7S | IPN50R3K0CE | IXTQ30N60L2 | IXTQ60N20L2
Keywords - FRL9130R MOSFET datasheet
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History: IPN60R360P7S | IPN50R3K0CE | IXTQ30N60L2 | IXTQ60N20L2



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