AP9T19GJ PDF and Equivalents Search

 

AP9T19GJ Specs and Replacement

Type Designator: AP9T19GJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 690 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO-251

AP9T19GJ substitution

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AP9T19GJ datasheet

 ..1. Size:71K  ape
ap9t19gj.pdf pdf_icon

AP9T19GJ

AP9T19GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 12V D Capable of 2.5V gate drive RDS(ON) 16m Single Drive Requirement ID 33A G S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combinat... See More ⇒

 9.1. Size:98K  ape
ap9t18gh-hf.pdf pdf_icon

AP9T19GJ

AP9T18GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 14m Fast Switching Characteristic ID 38A G RoHS Compliant & Halogen-Free S Description AP9T18 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po... See More ⇒

 9.2. Size:126K  ape
ap9t18geh ap9t18gej.pdf pdf_icon

AP9T19GJ

AP9T18GEH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D G-S Diode embedded BVDSS 20V G Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 40A RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H) rugg... See More ⇒

 9.3. Size:60K  ape
ap9t16agh-hf.pdf pdf_icon

AP9T19GJ

AP9T16AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of fas... See More ⇒

Detailed specifications: AP9T15GJ , AP9T16AGH-HF , AP9T16GH , AP9T16GJ , AP9T18GEH , AP9T18GEJ , AP9T18GH , AP9T18GJ , 10N65 , APA2N70K-HF , APS04N60H-HF , IRF830I-HF , IRF840I , 2SK3467 , 2SK3505 , 2SK3451-01MR , 2SK3326 .

History: IRF2807ZL

Keywords - AP9T19GJ MOSFET specs

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