APA2N70K-HF PDF and Equivalents Search

 

APA2N70K-HF Specs and Replacement

Type Designator: APA2N70K-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.6 nS

Cossⓘ - Output Capacitance: 25 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm

Package: SOT-223

APA2N70K-HF substitution

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APA2N70K-HF datasheet

 6.1. Size:68K  ape
 apa2n70k.pdf pdf_icon

APA2N70K-HF

APA2N70K RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 10 S Simple Drive Requirement ID 0.35A D G SOT-223 D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switching,low on-resistance and cost... See More ⇒

Detailed specifications: AP9T16AGH-HF , AP9T16GH , AP9T16GJ , AP9T18GEH , AP9T18GEJ , AP9T18GH , AP9T18GJ , AP9T19GJ , 5N60 , APS04N60H-HF , IRF830I-HF , IRF840I , 2SK3467 , 2SK3505 , 2SK3451-01MR , 2SK3326 , 2SK4101LS .

History: IRF2907ZS-7PPBF | 2SK3467

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