IRF830I-HF Datasheet. Specs and Replacement
Type Designator: IRF830I-HF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220CFM
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IRF830I-HF datasheet
..1. Size:95K ape
irf830i-hf.pdf 
IRF830I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.5 Simple Drive Requirement ID 4.5A G RoHS Compliant & Halogen-Free S Description G APEC MOSFET provide the power designer with the best combination of D TO-220CFM(I) S fast switching , ... See More ⇒
8.1. Size:155K international rectifier
irf830as.pdf
PD- 92006A SMPS MOSFET IRF830AS/L HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre... See More ⇒
8.2. Size:268K international rectifier
irf8308mpbf irf8308mtrpbf.pdf
PD -97671 IRF8308MPbF IRF8308MTRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (... See More ⇒
8.3. Size:326K international rectifier
irf830spbf.pdf
PD - 95542 IRF830SPbF Lead-Free SMD-220 7/21/04 Document Number 91064 www.vishay.com 1 IRF830SPbF Document Number 91064 www.vishay.com 2 IRF830SPbF Document Number 91064 www.vishay.com 3 IRF830SPbF Document Number 91064 www.vishay.com 4 IRF830SPbF Document Number 91064 www.vishay.com 5 IRF830SPbF Document Number 91064 www.vishay.com 6 IRF830SPbF Peak Diode... See More ⇒
8.4. Size:267K international rectifier
irf8306mtrpbf.pdf
PD - 97670 IRF8306MPbF IRF8306MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) l RoHS Compliant Containing No Lead and Halogen Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max 20V max 1.8m @ 10V 2.8m @ 4.5V l Low Profile (... See More ⇒
8.5. Size:220K international rectifier
irf8302mpbf.pdf
PD - 97667 IRF8302MPbF IRF8302MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) l RoHs Compliant and Halogen-Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max 20V max 1.4m @ 10V 2.2m @ 4.5V l Low Profile (... See More ⇒
8.6. Size:338K international rectifier
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irf8301m.pdf
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8.8. Size:108K international rectifier
irf830a.pdf
PD- 91878C SMPS MOSFET IRF830A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40 5.0A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curren... See More ⇒
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irf830pbf.pdf
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8.11. Size:168K international rectifier
irf830apbf.pdf
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8.12. Size:155K international rectifier
irf830al.pdf
PD- 92006A SMPS MOSFET IRF830AS/L HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre... See More ⇒
8.13. Size:676K international rectifier
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8.14. Size:58K philips
irf830 1.pdf
Philips Semiconductors Product specification PowerMOS transistor IRF830 Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V High thermal cycling performance Low thermal resistance ID = 5.9 A g RDS(ON) 1.5 s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel, enhancement mode PIN DESCRIPTI... See More ⇒
8.15. Size:92K st
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8.20. Size:911K samsung
irf830a.pdf
Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 1.169 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒
8.21. Size:207K vishay
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8.24. Size:1093K vishay
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IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 1.4 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 24 COMPLIANT Ruggedness Qgs (nC) 6.3 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configurati... See More ⇒
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8.27. Size:62K onsemi
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IRF830 Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. http //onsemi.com Silicon Gate for Fast Switching Speeds TMOS POWER FET Low RDS(on) to Minimize On Losses, Specified at Elevated Temp... See More ⇒
8.28. Size:46K hsmc
hirf830.pdf
Spec. No. MOS200407 HI-SINCERITY Issued Date 2004.10.01 Revised Date 2005.04.22 MICROELECTRONICS CORP. Page No. 1/4 HIRF830 Series Pin Assignment HIRF830 / HIRF830F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N - Channel MOSFETs provide the designer with the best combination of fast swi... See More ⇒
8.29. Size:95K ape
irf830.pdf
IRF830 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.5 Simple Drive Requirement ID 4.5A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost.... See More ⇒
8.30. Size:839K blue-rocket-elect
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IRF830 Rev.G Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi... See More ⇒
8.31. Size:1986K kexin
irf830s.pdf
SMD Type MOSFET N-Channel MOSFET IRF830S (KRF830S) Features VDS (V) = 500V ID = 4.5 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Fast Switching Repetitive Avalanche Rated D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS 20 Tc=25 4.5 Continuous Drain Current ID ... See More ⇒
8.32. Size:880K cn vbsemi
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IRF830ASTRL www.VBsemi.tw N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.86 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS) 22 Qgd... See More ⇒
8.33. Size:2535K cn vbsemi
irf830p.pdf
IRF830P www.VBsemi.tw N hannel 600 D S Power MOSFET FEATURES PRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600 Available requirement RDS(on) ( )VGS = 10 V 0.8 Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49 ruggedness Qgs (nC) 13 Fully characterized capacitance and avalanche voltage Qgd (nC) 20 and current Configuration Single ... See More ⇒
8.34. Size:231K inchange semiconductor
irf830fi.pdf
isc N-Channel MOSFET Transistor IRF830FI DESCRIPTION Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for high efficiency switch mode power supply. ABSO... See More ⇒
8.35. Size:114K inchange semiconductor
irf830.pdf
MOSFET INCHANGE IRF830 N-channel mosfet transistor Features With TO-220 package 1 2 3 Simple drive requirements Fast switching VDSS=500V; RDS(ON) 1.5 ;ID=4.5A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 500 V VGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25 4... See More ⇒
8.36. Size:234K inchange semiconductor
irf830a.pdf
INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF830A FEATURES Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Low Drive Requirement Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch Mode Power Supply Uninterruptable Power Supply High speed power switc... See More ⇒
Detailed specifications: AP9T16GJ, AP9T18GEH, AP9T18GEJ, AP9T18GH, AP9T18GJ, AP9T19GJ, APA2N70K-HF, APS04N60H-HF, STF13NM60N, IRF840I, 2SK3467, 2SK3505, 2SK3451-01MR, 2SK3326, 2SK4101LS, 2SK4212, 2SK508
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