All MOSFET. 2SK2025-01 Datasheet

 

2SK2025-01 Datasheet and Replacement


   Type Designator: 2SK2025-01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-220AB
 

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2SK2025-01 Datasheet (PDF)

 ..1. Size:214K  fuji
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2SK2025-01

N-channel MOS-FET2SK2025-01FAP-IIA Series 600V 2,4 4A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiva

 7.1. Size:215K  inchange semiconductor
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2SK2025-01

isc N-Channel MOSFET Transistor 2SK2025-01DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aS

 8.1. Size:145K  fuji
 2sk2028-01mr.pdf pdf_icon

2SK2025-01

 8.2. Size:169K  fuji
 2sk2024-01.pdf pdf_icon

2SK2025-01

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Keywords - 2SK2025-01 MOSFET datasheet

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